Epc2215

These new generation 200 V eGaN FETs are ideal for 48 VOUT synchronous rectification, class-D audio, solar microinverters and optimizers, and multilevel, high-voltage AC/DC converters

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Epc2115

EPC, the world's leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2215 and EPC2207 200 V eGaN FETs. The applications for these leading-edge devices include class-D audio, synchronous rectification, solar MPPTs (maximum power point tracker), DC-DC converters (hard-switched and resonant), and multilevel high voltage converters.

This press release features multimedia. View the full release here: https://www.businesswire.com/news/home/20200820005019/en/

GAN TRANS 200V 8MOHM BUMPED DIE. $8.36000: 9,074 - Immediate. 917-1218-6-ND. Tape & Reel (TR) Cut Tape. EPC2215 GAN TRANS 200V 8MOHM BUMPED DIE. EPC £4.35000 Details. 3 INSERT FEMALE 2POS SCREW. HARTING £24.05000 Details. Additional Resources. Latest Generation 200-V GaN FETs Double The Performance, EPC’s EPC2215 and EPC2207 200-V eGaN FETs, How2Power Today, September 2020 issue. SiC-Based Three-Phase Driver Module Delivers 80 A Peak, Is Fully Integrated, Apex Microtechnology’s SA310 three-phase driver, How2Power Today, July 2020 issue.

The EPC2215 from EPC is a 200 V, 22 mΩ eGaN FET with a pulsed current rating of 54 A in a tiny 2.6 mm 2 footprint. Ideal for class-D audio, synchronous rectification, DC/DC converters, solar MPPTs (maximum power point tracker), and motor drives. EPC2215 – Enhancement Mode Power Transistor V DS, 200 V R DS(on), 8 mΩ I D, 32 A Maximum Ratings PARAMETER VALUE UNIT V DS Drain-to-Source Voltage (Continuous) 200 V I D Continuous (T A = 25°C) 32 A Pulsed (25°C, T = 300 µs) 162 VGS Gate-to-Source Voltage 6 V Gate-to-Source Voltage -4 T J Operating Temperature -40 to 150 °C T STG Storage.


Performance comparison of benchmark silicon 200 V FET vs. 200 V eGaN FETs (Graphic: Business Wire)

The EPC2215 (8 mΩ, 162 Apulsed) and the EPC2207 (22 mΩ, 54 Apulsed) are about half the size of the prior generation 200 V eGaN devices and double the performance. The performance advantage over a benchmark silicon device is even higher. The EPC2215 has 33% lower on-resistance, yet is 15 times smaller in size. Gate charge (QG) is ten times smaller than the silicon MOSFET benchmark with the new technology, and like all eGaN FETs, there is no reverse recovery charge (QRR) enabling lower distortion class D audio amplifiers as well as more efficient synchronous rectifiers and motor drives.

According to Alex Lidow, EPC's co-founder and CEO, 'This latest generation of eGaN FETs achieve higher performance in a smaller, more thermally efficient size, and at a comparable cost to traditional MOSFETs. The inevitable displacement of the aging power MOSFET with GaN devices is becoming clearer every day.'

EPC worked in collaboration with Semiconductor Power Electronics Center (SPEC) at University of Texas at Austin to develop a 400 V, 2.5 kW-capable eGaN FET-based four-level flying capacitor multilevel bridgeless totem-pole rectifier that is suitable for data center applications using the new EPC2215 200 V device. Professor Alex Huang from the University of Texas at Austin commented that, 'the advantageous characteristics of eGaN FETs allowed this converter to achieve high power density, ultra-high efficiency, and low harmonic distortion.'

Price and Availability

Epc2216

Pricing for products and related development and reference design boards are noted in the table below. All products and boards are available from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Part

Number

2.5K Reel

Price/Unit

Half-Bridge

Development

Board

Price per

board

$2.84

$118.75

$1.49

$118.75

About EPC

EPC is the leader in enhancement-mode gallium nitride-based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (Lidar), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. EPC also has a growing portfolio of eGaN-based integrated circuits that provide even greater space, energy, and cost efficiency.

Epc2215

Visit our web site: www.epc-co.com

eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.

View source version on businesswire.com: https://www.businesswire.com/news/home/20200820005019/en/

Egan Fet

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